Paper No 14.4: Modeling and Characterization of a‐Si:H‐Based Hybrid Sensor and Display Pixel Array Circuits. (September 2013)

• Record Type: Journal Article
• Authors: Papadopoulos, Nikolas P.; Lee, Czang‐Ho; Wong, William S.
• Is Part Of: Digest of technical papers. Volume 44(2013)Supplement 1
• Page Start: 240
• Page End: 242
• Publication Date: 2013-09
• Subjects: Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.68
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract: Hybrid sensor and display pixels are modeled and circuit response simulated. The proposed circuits consists of two main parts: a light sensor and a display integrated onto the backplane array where a‐Si:H TFTs are used as a dual photosensor/switching device. The circuit has a wide operating range of nA range in the dark up to 1.2 μA for the highest light intensity for TFTs having channel lengths of 10μm. A prototype pixel array was fabricated and tested to confirm the design and simulation results. The results showed that the refresh rate of the pixel can reach up to 200 Hz for a TFT geometry having a channel length of 5μm. The grey scale of the pixel is created by pulse‐height and width modulation caused by voltages created by the a‐Si:H sensor.