49‐2: Design of a‐Si:H Bidirectional Gate Driver Circuit Using Time Division Driving Method for In‐Cell Touch Active‐Matrix Liquid Crystal Displays. Issue 1 (May 2017)

• Record Type: Journal Article
• Authors: Deng, Ming-Yang; Tsai, Meng-Chieh; Chen, Yung-Chih; Chen, Po-Syun; Lin, Chih-Lung
• Is Part Of: Digest of technical papers. Volume 48:Issue 1(2017)
• Page Start: 734
• Page End: 737
• Publication Date: 2017-05
• Subjects: Hydrogenated amorphous silicon (a-Si:H) -- in-cell touch -- gate driver -- thin film transistors (TFTs); Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.11751
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : This work presents a new bidirectional gate driver circuit using hydrogenated amorphous silicon (a‐Si:H) thin‐film transistors (TFTs) for applying to in‐cell touch panels. The proposed circuit allows the touch panel to pause the display operation to perform the touch sensing operations to increase the touch reporting rate. Furthermore, the proposed circuit can avoid severe threshold voltage shift (VTH ) of driving TFT during the long‐term touch sensing operation, enhancing the reliability of the circuit. Based on the measured electrical characteristics of a fabricated a‐Si:H TFT, the simulation results indicate that the differences of rising time and falling time of output waveforms are less than 8 %.