21‐3: Reliability of Coplanar Oxide TFTs : Analysis and Improvement. Issue 1 (May 2017)

• Record Type: Journal Article
• Authors: Baeck, Ju-Heyuck; Oh, Saeroonter; Lee, Dohyung; Park, Taeuk; Bae, Jong Uk; Park, Kwon-Shik; Yoon, SooYong; Kang, InByeong
• Is Part Of: Digest of technical papers. Volume 48:Issue 1(2017)
• Page Start: 294
• Page End: 296
• Publication Date: 2017-05
• Subjects: Oxide TFT -- a-IGZO -- top-gate -- coplanar -- PBTS -- interface trap density (Dit) -- phto C-V method -- XRR -- RBS -- ERDA; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.11611
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : We confirm that the PBTS instability of coplanar InGaZnO TFTs can be improved through the minimization of Non‐Bridging Oxygen Hole Centers (NBOHC) and optimization of hydrogen passivation in the GI/ACT interface region. The quantitative analysis of hydrogen and oxygen in each region are obtained from physical property measurements. Trap density in GI/ACT interface layer is obtained by photonic capacitance‐voltage measurements which are correlated with PBTS characteristics. A decrease of under coordinated bonding states lessens electron trap density, which brings improvement in PBTS from Vth = 2.61V to 0.21V by process optimization.