High Mobility 2D Palladium Diselenide Field‐Effect Transistors with Tunable Ambipolar Characteristics. Issue 21 (3rd April 2017)
- Record Type:
- Journal Article
- Title:
- High Mobility 2D Palladium Diselenide Field‐Effect Transistors with Tunable Ambipolar Characteristics. Issue 21 (3rd April 2017)
- Main Title:
- High Mobility 2D Palladium Diselenide Field‐Effect Transistors with Tunable Ambipolar Characteristics
- Authors:
- Chow, Wai Leong
Yu, Peng
Liu, Fucai
Hong, Jinhua
Wang, Xingli
Zeng, Qingsheng
Hsu, Chuang‐Han
Zhu, Chao
Zhou, Jiadong
Wang, Xiaowei
Xia, Juan
Yan, Jiaxu
Chen, Yu
Wu, Di
Yu, Ting
Shen, Zexiang
Lin, Hsin
Jin, Chuanhong
Tay, Beng Kang
Liu, Zheng - Abstract:
- Abstract : Due to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe2 ), a noble‐transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field‐effect transistors (FETs) based on ultrathin PdSe2 show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe2 to exhibit electron‐dominated transport with high mobility ( µ e (max) = 216 cm 2 V −1 s −1 ) and on/off ratio up to 10 3 . Hole‐dominated‐transport PdSe2 can be obtained by molecular doping using F4 ‐TCNQ. This pioneer work on PdSe2 will spark interests in the less explored regime of noble‐TMDCs. Abstract : 2D palladium diselenide field‐effect transistors are fabricated and investigated. The devices show ambipolar behavior with tunable ambipolar transport properties by thermal annealing and chemical doping. The electron and hole mobilities are ≈216 and 12 cm 2 V −1 s −1, respectively. The results demonstrate that PdSe2 is promising for 2D electronics applications.
- Is Part Of:
- Advanced materials. Volume 29:Issue 21(2017)
- Journal:
- Advanced materials
- Issue:
- Volume 29:Issue 21(2017)
- Issue Display:
- Volume 29, Issue 21 (2017)
- Year:
- 2017
- Volume:
- 29
- Issue:
- 21
- Issue Sort Value:
- 2017-0029-0021-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2017-04-03
- Subjects:
- 2D materials -- ambipolar -- field‐effect transistors -- high mobility -- palladium diselenide
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1521-4095 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adma.201602969 ↗
- Languages:
- English
- ISSNs:
- 0935-9648
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.897800
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 607.xml