Precursors for p‐Type Nickel Oxide: Atmospheric‐Pressure Metal–Organic Chemical‐Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions. Issue 13 (3rd April 2017)

• Record Type: Journal Article
• Authors: Cosham, Samuel D.; Richards, Stephen P.; Manning, Troy; Hill, Michael S.; Johnson, Andrew L.; Molloy, Kieran C.
• Is Part Of: European journal of inorganic chemistry. Issue 13(2017)
• Page Start: 1868
• Page End: 1876
• Publication Date: 2017-04-03
• Subjects: Chemical vapor deposition -- Nickel -- Precursors -- Semiconductors -- Thin films; Chemistry, Inorganic -- Periodicals; Organometallic chemistry -- Periodicals; Bioinorganic chemistry -- Periodicals; Solid state chemistry -- Periodicals; 546
• DOI: 10.1002/ejic.201601419
• Languages: English
• ISSNs: 1434-1948

Abstract

Abstract : A series of unsymmetrical nickel β‐diketonate derivatives have been synthesised and structurally characterised for application as atmospheric‐pressure metal–organic chemical vapour deposition (AP‐MOCVD) precursors for nickel oxide. (TMEDA)Ni[MeC(O)CHC(O)OEt]2 (TMEDA = tetramethylethylenediamine) was selected and used to deposit NiO films of varying thickness onto commercial indium tin oxide (ITO)‐coated glass; the work function of the ITO was raised as a consequence. Abstract : We describe a series of nickel(II) β‐diketonate precursors and their use in the atmospheric‐pressure chemical‐vapour deposition of very thin films of NiO on indium tin oxide (ITO) at 400 °C. Auger spectroscopy revealed that the as‐deposited films are rich in Ni metal, which is partially transformed to NiO on annealing, and showed a significant modification of the work function of the ITO.