High‐Quality Epitaxial MgB2 Josephson Junctions Grown by Molecular Beam Epitaxy1 . Issue 5 (20th February 2017)

• Record Type: Journal Article
• Authors: Li, Lin; Zhang, Hui; Yang, Yi‐Hang; Miao, Guo‐Xing
• Is Part Of: Advanced engineering materials. Volume 19:Issue 5(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-02-20
• Subjects: Materials -- Periodicals; 620.11
• DOI: 10.1002/adem.201600792
• Languages: English
• ISSNs: 1438-1656

Abstract

Abstract : Epitaxial MgB2 films are grown with molecular beam epitaxy (MBE) and optimized with the assistance of in situ reflection high‐energy electron diffraction (RHEED). The RHEED patterns clearly revealed the evolution of film structures with growth temperatures and Mg:B ratio, providing the most direct guidance on optimizing growth conditions. A threshold temperature is identified, below which excess Mg will physically condense into the film, and above which excess Mg vaporizes right away leading to a self‐limiting growth process for chemically‐bound MgB2 phases. Hetero‐epitaxial (0001)‐MgB2 /(111)‐MgO/(0001)‐MgB2 stacks are deposited and fabricated into micro Josephson junctions, which revealed clear Fraunhofer patterns and Fiske steps, indicating superb materials quality. Abstract : Epitaxial MgB2 films are grown with molecular beam epitaxy (MBE) and optimized with the assistance of in situ reflection high‐energy electron diffraction (RHEED). Hetero‐epitaxial (0001)‐MgB2 /(111)‐MgO/(0001)‐MgB2 stacks are deposited and fabricated into micro Josephson junctions, which reveal clear Fraunhofer patterns and Fiske steps, indicating superb materials quality.