Cite
HARVARD Citation
Khalfaoui, W. et al. (2017). Impact of rapid thermal annealing on Mg‐implanted GaN with a SiOx/AlN cap‐layer. Physica status solidi. 214 (4), p. n/a. [Online].
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Khalfaoui, W. et al. (2017). Impact of rapid thermal annealing on Mg‐implanted GaN with a SiOx/AlN cap‐layer. Physica status solidi. 214 (4), p. n/a. [Online].