Potential of epitaxial silicon carbide microbeam resonators for chemical sensing. Issue 4 (1st September 2016)

• Record Type: Journal Article
• Authors: Kermany, Atieh R.; Bennett, James S.; Valenzuela, Victor M.; Bowen, Warwick P.; Iacopi, Francesca
• Is Part Of: Physica status solidi. Volume 214:Issue 4(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-09-01
• Subjects: chemical sensors -- epitaxy -- microbeam resonators -- residual stress -- SiC; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201600437
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Epitaxial silicon carbide is promising for chemical resonant sensing applications due to its excellent mechanical, thermal, and biochemical properties. This paper reviews six important aspects of (i) silicon carbide heteroepitaxial growth and residual stress; (ii) silicon carbide beam resonators, resonator types, and fabrication processes; (iii) sensing principles, dynamic sensing mechanical performance, and transduction techniques; (iv) damping parameters; (v) mean stress influence on mass sensitivity of SiC flexural microbridge resonators; and (vi) gradient stress impact on SiC cantilever static behavior. The primary goal is to suggest the means to improve the mass sensitivity parameter and application range of epitaxial silicon carbide microbeam resonators and benchmark it with other relevant materials. Abstract : Molecular recognition sensors with high mass accuracy are in high demand, creating thus a unique opportunity for gravimetric sensing with microresonators. This article reviews the parameters influencing the mass sensitivity and the approaches required to obtain the ultimate sensitivity with epitaxial SiC beam resonators.