Various and Tunable Transport Properties of WSe2 Transistor Formed by Metal Contacts. Issue 18 (10th March 2017)

• Record Type: Journal Article
• Authors: Liu, Chunsen; Yan, Xiao; Zhang, Enze; Song, Xiongfei; Sun, Qingqing; Ding, Shijin; Bao, Wenzhong; Xiu, Faxian; Zhou, Peng; Zhang, David Wei
• Is Part Of: Small. Volume 13:Issue 18(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-03-10
• Subjects: large tunneling current -- metal contacts -- tunneling effect -- WSe2; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201604319
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract : The abundant electronic and optical properties of 2D materials that are just one‐atom thick pave the way for many novel electronic applications. One important application is to explore the band‐to‐band tunneling in the heterojunction built by different 2D materials. Here, a gate‐controlled WSe2 transistor is constructed by using different work function metals to form the drain (Pt) and source (Cr) electrodes. The device can be gate‐modulated to exhibit three modes of operation, i.e., the tunneling mode with remarkable negative differential resistance, the transition mode with a second electron tunneling phenomenon for backward bias, and finally the conventional diode mode with rectifying characteristics. In contrast to the heterojunctions built by different 2D materials, these devices show significantly enhanced tunneling current by two orders of magnitude, which may largely benefit from the clean interfaces. These results pave the way toward design of novel electronic devices using the modulation of metal work functions. Abstract : A WSe2 transistor which can be gate‐modulated to exhibit three operation modes is built which uses different work function metals to form drain and source: tunneling mode with negative differential resistance, transition mode with second electrons tunneling phenomenon, and diode mode with rectifying characteristics. The results demonstrate that WSe2 can be tuned to exhibit rich electrical properties.