Fast growth of large single-crystalline graphene assisted by sequential double oxygen passivation. (May 2017)

• Record Type: Journal Article
• Authors: Chen, Jiewei; Cui, Mengqi; Wu, Gaoxiang; Wang, Tianyue; Mbengue, Joseph Michel; Li, Yingfeng; Li, Meicheng
• Is Part Of: Carbon. Volume 116(2017)
• Page Start: 133
• Page End: 138
• Publication Date: 2017-05
• Subjects: Fast growth of larger single-crystal graphene -- Sequential double oxygen passivation -- Oxygen induced weak carbon adsorption energy; Carbon -- Periodicals; Carbone -- Périodiques; Koolstof; Toepassingen; Electronic journals; 546.681
• DOI: 10.1016/j.carbon.2017.01.108
• Languages: English
• ISSNs: 0008-6223

Abstract

Abstract: Graphene has been considered an extraordinary platform for electronic applications, while it still remains a challenge to fast synthesize large single-crystalline graphene (LSCG) for widespread use. Since the adsorption energy of single carbon on the substrate plays an important role in the nucleation and growth of graphene, we have considered adjusting its adsorption energy to synthesize LSCG. Here, our density functional theory (DFT) calculations expose that oxygen can significantly reduce (∼1.03 eV) the adsorption energy of single carbon on oxygen-covered Cu compared with the bare Cu. Motivated by the calculation result that oxygen can induce weaker carbon adsorption energy, the sequential double oxygen passivation method through chemical vapor deposition is proposed to successfully grow the millimeter-scale single-crystalline graphene with the rate of about 100 μm min −1 . This approach could provide a new sight into fast synthesizing LSCG facilely and economically. Graphical abstract: