Doping, Contact and Interface Engineering of Two‐Dimensional Layered Transition Metal Dichalcogenides Transistors. (7th December 2016)

• Record Type: Journal Article
• Authors: Zhao, Yuda; Xu, Kang; Pan, Feng; Zhou, Changjian; Zhou, Feichi; Chai, Yang
• Is Part Of: Advanced functional materials. Volume 27:Number 19(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-12-07
• Subjects: 2D materials -- contact -- doping -- interface -- transition metal dichalcogenides; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201603484
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : Owing to an ultrathin body, atomic scale smoothness, dangling bond‐free surface, and sizable bandgap, transistors based on two‐dimensional (2D) layered semiconductors show the potential of scalability down to the nanoscale, high‐density three‐dimensional integration, and superior performance in terms of better electrostatic control and smaller power consumption compared with conventional three‐dimensional semiconductors (Si, Ge, and III‐V compound materials). To apply 2D layered materials into complementary metal‐oxide‐semiconductor logic circuits, it is important to modulate the carrier type and density in a controllable manner, and engineer the contact (between metal electrode and 2D semiconductor) and the interface (between dielectrics and semiconducting channel) to get close to their intrinsic carrier mobility. In this review, the most widely studied 2D transition metal dichalcogenides (TMD) are focused on, and an overview of recent progress on doping, contact, and interface engineering of the TMD‐based field‐effect transistors is provided. Abstract : Field‐effect transistors based on two‐dimensional transition metal dichalcogenides (TMDs) show the potential for next‐generation electronic devices. Here, the state‐of‐the‐art methods to control the carrier type, engineer the metal/TMDs contact, and optimize the dielectric/TMDs interface are reviewed.