Transition Metal Dichalcogenides: Suppression of Defects and Deep Levels Using Isoelectronic Tungsten Substitution in Monolayer MoSe2 (Adv. Funct. Mater. 19/2017). (16th May 2017)

• Record Type: Journal Article
• Authors: Li, Xufan; Puretzky, Alexander A.; Sang, Xiahan; KC, Santosh; Tian, Mengkun; Ceballos, Frank; Mahjouri‐Samani, Masoud; Wang, Kai; Unocic, Raymond R.; Zhao, Hui; Duscher, Gerd; Cooper, Valentino R.; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai
• Is Part Of: Advanced functional materials. Volume 27:Number 19(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-05-16
• Subjects: isoelectronic -- Mo1–xWxSe2 -- monolayers -- photoluminescence -- vacancies; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201770119
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : In article number1603850, Kai Xiao and co‐workers present a new strategy for suppressing chalcogen defects in 2D transition metal dichalcogenide monolayers, specifically MoSe2 monolayers. Isoelectronic tungsten (W) alloying during monolayer synthesis results in Mo1− x W x Se2 . Defect suppression is essential for the development of high performance optoelectronic and electronic devices.