N-type Polycrystalline Si Thick Films Deposited on SiNx-coated Metallurgical Grade Si Substrates. Issue 1 (January 2015)

• Record Type: Journal Article
• Authors: Zhang, Hongliang; Zhu, Liqiang; Guo, Liqiang; Liu, Yanghui; Wan, Qing
• Is Part Of: Journal of materials science & technology. Volume 31:Issue 1(2015:Jan.)
• Page Start: 65
• Page End: 69
• Publication Date: 2015-01
• Subjects: Thermal chemical vapor deposition -- Metallurgical grade Si -- Polycrystalline silicon (poly-Si) thick films -- Phosphorus diffusion; Metals -- Periodicals; Materials science -- Periodicals; Materials science; Metals; Periodicals; 620.1105
• DOI: 10.1016/j.jmst.2014.04.012
• Languages: English
• ISSNs: 1005-0302

Abstract

Abstract : For photovoltaic applications, low-cost SiN x -coated metallurgical grade silicon (MG-Si) wafers were used as substrates for polycrystalline silicon (poly-Si) thick films deposition at temperatures ranging from 640 to 880 °C by thermal chemical vapor deposition. X-ray diffraction and Raman results indicated that high-quality poly-Si thick films were deposited at 880 °C. To obtain n-type poly-Si, the as-deposited poly-Si films were annealed at 880 °C capped with a phosphosilicate glass. Electrical properties of the n-type poly-Si thick films were investigated by four-probe and Hall measurements. The carrier concentration and electron mobility of the n-type poly-Si film was estimated to be 1.7 × 10 19 cm −3 and 68.1 cm 2 V −1 s −1, respectively. High-quality poly-Si thick films deposited on MG-Si wafers are very promising for photovoltaic applications.