Photoluminescence and lasing characteristics of single nonpolar GaN microwires. Issue 35 (18th April 2017)

• Record Type: Journal Article
• Authors: Yan, S. S.; Chen, A. Q.; Wu, Y. Y.; Zhu, H.; Wang, X. H.; Ling, C. C.; Su, S. C.
• Is Part Of: RSC advances. Volume 7:Issue 35(2017)
• Page Start: 21541
• Page End: 21546
• Publication Date: 2017-04-18
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c7ra01921a
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : Nonpolar a-axial GaN MWs were fabricated on a patterned Si substrate via metal–organic chemical vapor deposition (MOCVD) without the assistance of any catalyst. Abstract : Nonpolar a-axial GaN MWs were fabricated on a patterned Si substrate via metal–organic chemical vapor deposition (MOCVD) without the assistance of any catalyst. The temperature-dependent photoluminescence (PL) properties of a single GaN MW were discussed comprehensively. Below the temperature of 90 K, the neutral donor-bound exciton (D 0 X) line dominates in the spectrum, while the free–exciton transition dominates at temperatures above 90 K. The optical properties of GaN MWs exhibit a multiple-mode-stimulated-amplified emission with a peak around 375 nm and a corresponding lasing threshold of about 120 kW cm −2 . In addition, the lasing characteristics of GaN MWs were explored by the finite-difference time-domain (FDTD) method.