Cite
HARVARD Citation
Yang, S. et al. (2017). 2D Materials: C3N—A 2D Crystalline, Hole‐Free, Tunable‐Narrow‐Bandgap Semiconductor with Ferromagnetic Properties (Adv. Mater. 16/2017). Advanced materials. 29 (16), p. n/a. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Yang, S. et al. (2017). 2D Materials: C3N—A 2D Crystalline, Hole‐Free, Tunable‐Narrow‐Bandgap Semiconductor with Ferromagnetic Properties (Adv. Mater. 16/2017). Advanced materials. 29 (16), p. n/a. [Online].