Cite
HARVARD Citation
Sementa, L. et al. (2017). Ab initio modelling of oxygen vacancy arrangement in highly defective HfO2 resistive layers. Physical chemistry chemical physics. 19 (18), pp. 11318-11325. [Online].
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Sementa, L. et al. (2017). Ab initio modelling of oxygen vacancy arrangement in highly defective HfO2 resistive layers. Physical chemistry chemical physics. 19 (18), pp. 11318-11325. [Online].