The influence of the quantum‐confined Stark effect on InGaN/AlGaN quantum dots (Phys. Status Solidi B 5/2017). Issue 5 (11th May 2017)

• Record Type: Journal Article
• Authors: Zakizade, E.; Figge, S.; Laurus, C.; Mehrtens, T.; Rosenauer, A.; Hommel, D.; Gutowski, J.; Sebald, K.
• Is Part Of: Physica status solidi. Volume 254:Issue 5(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-05-11
• Subjects: Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201770227
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : Micro‐photoluminescence studies on single InGaN/AlGaN quantum dots grown by metal‐organic vapor phase epitaxy, measured in dependence on an external electric field, are presented by Zakizade et al. (article no.1600325 ). These quantum dots possess an additional AlGaN layer as bottom barrier. The resulting carrier confinement allows for the observation of excitonic emission lines up to 100 K. The quantumconfined Stark effect is tested by applying a vertical electric field via metal contacts and detecting the single‐quantum‐dot emission at metal apertures. The application of an electric field parallel to the growth direction of the sample can compensate the internal electric field. The authors' experiments indicate the action of this effect by a blue shift of the single quantum dot emission due to the enhanced overlap between the electron and hole wave functions further resulting in the observed increase of the PL intensity. Additionally, the investigation of the biexcitonic binding energy in dependence on the external field demonstrates that the partial compensation of the internal field results in an increase of the biexciton binding energy and influences the intensity of its emission.