Influence of A‐site nonstoichiometry on the electrical properties of BT‐BMT. Issue 3 (30th December 2016)

• Record Type: Journal Article
• Authors: Muhammad, Raz; Khesro, Amir
• Is Part Of: Journal of the American Ceramic Society. Volume 100:Issue 3(2017)
• Page Start: 1091
• Page End: 1097
• Publication Date: 2016-12-30
• Subjects: BaTiO3 -- dielectrics -- electrical properties; Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.14684
• Languages: English
• ISSNs: 0002-7820

Abstract

Abstract: A stoichiometric and 2 mol% Ba deficient samples in the formulation 0.5BaTiO3 ‐0.5BiMg1/2 Ti1/2 O3 (BT‐BMT) were processed via a mixed oxide solid‐state route. The deficient sample exhibited a high relative permittivity (2100±15%) over the temperature range 90‐450°C and a low dielectric loss (tanδ < 0.01), maintained up to high temperature (430°C). The samples exhibited intrinsic conduction mechanism and showed an n ‐type character. By introducing 2 mol% Ba vacancies, a dramatic influence on the dielectric loss was observed which was mainly associated with the trapping of electrons by barium‐oxygen vacancy pair associated with the intentionally produced cation vacancies. Thus, control of composition by creating deficiency allows fine tuning of the dielectric properties of BT‐BMT ceramics for applications in high‐temperature multilayered ceramic capacitors.