Design of power integrated circuits in full AlGaN/GaN MIS‐HEMT configuration for power conversion. Issue 3 (11th November 2016)

• Record Type: Journal Article
• Authors: Sun, Ruize; Liang, Yung C.; Yeo, Yee‐Chia; Wang, Yun‐Hsiang; Zhao, Cezhou
• Is Part Of: Physica status solidi. Volume 214:Issue 3(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-11-11
• Subjects: AlGaN -- buck converters -- GaN -- high electron mobility transistors -- metal–insulator–semiconductor structures; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201600562
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : In order to examine the feasibility of full wide‐bandgap GaN‐based converters in aerospace power conversion applications, this paper proposes a monolithic DC–DC buck converter design with integrated high‐side gate driver, over‐current protection, and pulse‐width‐modulation feedback control circuits based on full AlGaN/GaN MIS‐HEMT configuration. After model calibration of the DC and transient behaviors with fabricated normally‐ON and normally‐OFF AlGaN/GaN MIS‐HEMT devices, the DC–DC buck converter is simulated. The circuit converts the input 100 V down to an adjustable range at 1 MHz switching frequency. The over‐current protection function can properly protect the converter at a preset over‐current threshold. The converter can respond to the load current and line input voltage fluctuations due to the integrated feedback control. These results illustrate the performance of proposed all‐GaN DC–DC power converter design.