A Metal–Insulator Transition of the Buried MnO2 Monolayer in Complex Oxide Heterostructure. Issue 41 (29th August 2016)

• Record Type: Journal Article
• Authors: Liu, Heng‐Jui; Lin, Jheng‐Cyuan; Fang, Yue‐Wen; Wang, Jing‐Ching; Huang, Bo‐Chao; Gao, Xiang; Huang, Rong; Dean, Philip R.; Hatton, Peter D.; Chin, Yi‐Ying; Lin, Hong‐Ji; Chen, Chien‐Te; Ikuhara, Yuichi; Chiu, Ya‐Ping; Chang, Chia‐Seng; Duan, Chun‐Gang; He, Qing; Chu, Ying‐Hao
• Is Part Of: Advanced materials. Volume 28:Issue 41(2016)
• Page Start: 9142
• Page End: 9151
• Publication Date: 2016-08-29
• Subjects: 2D materials -- complex oxide heterostructures -- manganites -- MnO2 monolayer; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201602281
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : A novel artificially created MnO2 monolayer system is demonstrated in atomically controlled epitaxial perovskite heterostructures. With careful design of different electrostatic boundary conditions, a magnetic transition as well as a metal–insulator transition of the MnO2 monolayer is unveiled, providing a fundamental understanding of dimensionality‐confined strongly correlated electron systems and a direction to design new electronic devices.