Investigating subsurface damages in semiconductor–insulator–semiconductor solar cells with THz spectroscopy. Issue 5 (30th December 2016)

• Record Type: Journal Article
• Authors: Blumröder, Ulrike; Hempel, Hannes; Füchsel, Kevin; Hoyer, Patrick; Bingel, Astrid; Eichberger, Rainer; Unold, Thomas; Nolte, Stefan
• Is Part Of: Physica status solidi. Volume 214:Issue 5(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2016-12-30
• Subjects: optical‐pump THz‐probe -- Solar cell -- surface charges -- surface damage -- THz emission; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201600590
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract: The influence of near‐surface crystal damage on carrier dynamics in silicon has been investigated with optical‐pump THz‐probe and THz emission studies. The surface damage is caused by a plasma process used for the fabrication of the ultrathin insulator within semiconductor–insulator–semiconductor (SIS) solar cells. The ion bombardment during the plasma process introduces a highly damaged subsurface region. Furthermore, the integration of positive interface charges leads to the formation of a depletion region that can be detected via the emitted THz radiation. The results are compared with classic I – U ‐characterization demonstrating that THz spectroscopy can be used as a supplementary tool for the investigation of process‐induced surface damages.