Universal closed-form expression based on magnetic flux density for the inductance of Tapered Through-Silicon Vias (T-TSVs). (May 2017)

• Record Type: Journal Article
• Authors: Mei, Zheng; Dong, Gang; Yang, Yintang; Zheng, Junping; Chai, Jingrui; Zhu, Weijun
• Is Part Of: Microelectronics journal. Volume 63(2017)
• Page Start: 20
• Page End: 26
• Publication Date: 2017-05
• Subjects: Three-dimensional (3D) integrated circuit (IC) -- Tapered through silicon vias (T-TSVs) -- Inductance; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2017.02.015
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: In this paper, a universal closed-form expression for the parasitic inductance of tapered through-silicon vias (T-TSVs) with a frequency of up to 20 GHz is proposed. The expression, which considers skin and proximity effects, can be used to calculate the self-partial inductance and mutual-partial inductance, considering TSVs located in adjacent layers or in the same layer. When the slope angle is 90°, the obtained formulas can be reduced to the formulas of cylindrical TSVs. The comparison between the results of the proposed formulas and the results of the three-dimensional quasi-static field solver (Q3D) demonstrates that the proposed formulas are extremely accurate, with a maximum error of 2%.