Enhanced electron field emission properties from hybrid nanostructures of graphene/Si tip array. Issue 4 (9th December 2014)

• Record Type: Journal Article
• Authors: Chang, Tinghsun; Lu, Fangwei; Kunuku, Srinivasu; Leou, Kehchyang; Tai, Nyanhwa; Lin, Inan
• Is Part Of: RSC advances. Volume 5:Issue 4(2015)
• Page Start: 2928
• Page End: 2933
• Publication Date: 2014-12-09
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c4ra13363c
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : High efficiency with excellently stable electron field emitters based on monolayer graphene coated on well-aligned Si tip (graphene/SiT) arrays fabricated by a simple transfer method is demonstrated. Abstract : Highly efficient with excellent stability electron field emitters based on monolayer graphene coated on well-aligned Si tip (graphene/SiT) arrays fabricated by a simple transfer method are demonstrated. The graphene monolayer is coated on the Si tip array using a chemical vapor deposition process, while the SiTs are prepared through the etching process of a Si substrate. The novel heterostructure field emitter enhanced electron tunneling, as a result, exhibits a better emission property. In addition, the fabricated microplasma devices based on the graphene/SiT heterostructure are closely correlated to the field emission properties of the graphene/SiT materials. The monolayer graphene supported on vertical SiTs provides the protruded nanostructure, which locally enhances the electric field and thus improves the field emission and the plasma illumination characteristics.