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HARVARD Citation
Acurio, E. et al. (2017). On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT. Solid-state electronics. pp. 49-56. [Online].
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Acurio, E. et al. (2017). On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT. Solid-state electronics. pp. 49-56. [Online].