Comparative study of scintillation and optical properties of Ga2O3 doped with ns2 ions. (June 2017)

• Record Type: Journal Article
• Authors: Usui, Yuki; Oya, Tomohisa; Okada, Go; Kawaguchi, Noriaki; Yanagida, Takayuki
• Is Part Of: Materials research bulletin. Volume 90(2017)
• Page Start: 266
• Page End: 272
• Publication Date: 2017-06
• Subjects: Scintillation -- Ga2O3 -- ns2 ions; Materials -- Periodicals; Crystal growth -- Periodicals; Matériaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Crystal growth; Materials; Periodicals; 620.11
• DOI: 10.1016/j.materresbull.2017.02.016
• Languages: English
• ISSNs: 0025-5408

Abstract

Graphical abstract: Highlights: Ga2 O3 crystals doped with a series of ns 2 ions were synthesized by the FZ method. The PL and scintillation are mainly due to defect-related luminescent centers. The decay analyses revealed a presence of ns2 ions optically activated in Ga2O3. Sn-doped Ga2O3 showed the highest scintillation light yield among the samples. Abstract: Ga2 O3 crystals doped with nominally 1% ns 2 ions (In, Tl, Sn, Pb, Sb and Bi) were synthesized by the Floating Zone (FZ) method, and we systematically evaluated the optical and scintillation properties. The peak emission was observed around 2.8 eV in photoluminescence (PL) under the excitation energy of 4.68 eV and around 3.0 eV in scintillation under X-ray irradiation. The PL and scintillation decay times were approximated by a sum of three exponential decay functions; and the derived decay times ranged several tens of nanoseconds, hundreds of nanoseconds and several microseconds. The slowest component was ascribed to the nsnp-ns 2 transitions while the fastest and intermediate components were blamed for the defect-related emission. Among the present samples, Sn-doped Ga2 O3 showed the highest scintillation light yield.