Low‐Temperature Atomic Layer Deposition of MoS2 Films. Issue 18 (3rd April 2017)

• Record Type: Journal Article
• Authors: Jurca, Titel; Moody, Michael J.; Henning, Alex; Emery, Jonathan D.; Wang, Binghao; Tan, Jeffrey M.; Lohr, Tracy L.; Lauhon, Lincoln J.; Marks, Tobin J.
• Is Part Of: Angewandte Chemie international edition. Volume 56:Issue 18(2017)
• Page Start: 4991
• Page End: 4995
• Publication Date: 2017-04-03
• Subjects: atomic layer deposition -- low-temperature film growth -- metal–organic precursors -- molybdenum disulfide; Chemistry -- Periodicals; 540
• DOI: 10.1002/anie.201611838
• Languages: English
• ISSNs: 1433-7851

Abstract

Abstract: Wet chemical screening reveals the very high reactivity of Mo(NMe2 )4 with H2 S for the low‐temperature synthesis of MoS2 . This observation motivated an investigation of Mo(NMe2 )4 as a volatile precursor for the atomic layer deposition (ALD) of MoS2 thin films. Herein we report that Mo(NMe2 )4 enables MoS2 film growth at record low temperatures—as low as 60 °C. The as‐deposited films are amorphous but can be readily crystallized by annealing. Importantly, the low ALD growth temperature is compatible with photolithographic and lift‐off patterning for the straightforward fabrication of diverse device structures. Abstract : A temperature of 60 °C is enough for the atomic layer deposition (ALD) of MoS2 thin films with H2 S and Mo(NMe2 )4 as the precursors. Through annealing the as‐deposited films can be crystallized, and they are shown to be compatible with photolithography, enabling facile large‐area patterning. This approach suggests scalable processes for applications from electronics to catalysis.