C3N—A 2D Crystalline, Hole‐Free, Tunable‐Narrow‐Bandgap Semiconductor with Ferromagnetic Properties. Issue 16 (27th February 2017)
- Record Type:
- Journal Article
- Title:
- C3N—A 2D Crystalline, Hole‐Free, Tunable‐Narrow‐Bandgap Semiconductor with Ferromagnetic Properties. Issue 16 (27th February 2017)
- Main Title:
- C3N—A 2D Crystalline, Hole‐Free, Tunable‐Narrow‐Bandgap Semiconductor with Ferromagnetic Properties
- Authors:
- Yang, Siwei
Li, Wei
Ye, Caichao
Wang, Gang
Tian, He
Zhu, Chong
He, Peng
Ding, Guqiao
Xie, Xiaoming
Liu, Yang
Lifshitz, Yeshayahu
Lee, Shuit‐Tong
Kang, Zhenhui
Jiang, Mianheng - Abstract:
- Abstract : Graphene has initiated intensive research efforts on 2D crystalline materials due to its extraordinary set of properties and the resulting host of possible applications. Here the authors report on the controllable large‐scale synthesis of C3 N, a 2D crystalline, hole‐free extension of graphene, its structural characterization, and some of its unique properties. C3 N is fabricated by polymerization of 2, 3‐diaminophenazine. It consists of a 2D honeycomb lattice with a homogeneous distribution of nitrogen atoms, where both N and C atoms show a D6h ‐symmetry. C3 N is a semiconductor with an indirect bandgap of 0.39 eV that can be tuned to cover the entire visible range by fabrication of quantum dots with different diameters. Back‐gated field‐effect transistors made of single‐layer C3 N display an on–off current ratio reaching 5.5 × 10 10 . Surprisingly, C3 N exhibits a ferromagnetic order at low temperatures (<96 K) when doped with hydrogen. This new member of the graphene family opens the door for both fundamental basic research and possible future applications. Abstract : C3 N consists of a 2D honeycomb lattice with a homogeneous distribution of nitrogen atoms, where both N and C atoms show D6h ‐symmetry. It is a semiconductor with an indirect bandgap of 0.39 eV. Back‐gated field‐effect transistors made of single‐layer C3 N display an on–off current ratio reaching 5.5 × 10 10 . Surprisingly, C3 N exhibits ferromagnetic order when doped with hydrogen.
- Is Part Of:
- Advanced materials. Volume 29:Issue 16(2017)
- Journal:
- Advanced materials
- Issue:
- Volume 29:Issue 16(2017)
- Issue Display:
- Volume 29, Issue 16 (2017)
- Year:
- 2017
- Volume:
- 29
- Issue:
- 16
- Issue Sort Value:
- 2017-0029-0016-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2017-02-27
- Subjects:
- 2D materials -- carbon -- ferromagnetic properties -- semiconductors
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1521-4095 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adma.201605625 ↗
- Languages:
- English
- ISSNs:
- 0935-9648
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.897800
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 951.xml