Effect of acetic acid on the leaching behavior of impurities in metallurgical grade silicon. Issue 7 (3rd May 2017)

• Record Type: Journal Article
• Authors: Lu, Haifei; Wei, Kuixian; Ma, Wenhui; Xie, Keqiang; Wu, Jijun; Lei, Yun; Dai, Yongnian
• Is Part Of: Separation science and technology. Volume 52:Issue 7(2017)
• Page Start: 1257
• Page End: 1264
• Publication Date: 2017-05-03
• Subjects: Acid leaching -- acetic acid -- metallurgical grade silicon -- microstructure -- purification; Separation (Technology) -- Periodicals; 660.284205
• DOI: 10.1080/01496395.2017.1282964
• Languages: English
• ISSNs: 0149-6395

Abstract

ABSTRACT: To explore the potential of acid leaching in purification metallurgical grade silicon (MG-Si) for solar cells, the effect of acetic acid on the leaching behavior was investigated in the present work by focusing on the behavior of impurities affected by the addition of acetic acid to a conventional acid mixture composed of hydrochloric acid and hydrofluoric acid. The etching results reveal that the HCl–HF–CH3 COOH mixture is a better lixiviant for dissolving impurity inclusions in MG-Si. The extraction yield of impurities in HCl–HF–CH3 COOH leaching was found to increase by 7% compared to conventional HCl–HF leaching.