Promising high-k dielectric permittivity of pyrochlore-type crystals of Nd2Hf2O7. Issue 3 (8th December 2014)

• Record Type: Journal Article
• Authors: Chun, J.; Reuvekamp, P. G.; Chen, D.; Lin, C.; Kremer, R. K.
• Is Part Of: Journal of materials chemistry. Volume 3:Issue 3(2015)
• Page Start: 491
• Page End: 494
• Publication Date: 2014-12-08
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c4tc02416h
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : We report on the properties of a Nd2 Hf2 O7 single crystal which is a promising high- k gate dielectric due to its high permittivity and band gap. Abstract : A single crystal of Nd2 Hf2 O7 was grown by the floating-zone technique. We have characterized its structural, dielectric, optical and thermal properties. At room temperature, the static dielectric constant amounts to ∼46. Ultraviolet absorption measurements indicate a direct band gap of ∼5 eV.