A highly linear RF mixer using gate-all-around junctionless transistor. Issue 2 (3rd April 2017)

• Record Type: Journal Article
• Authors: Pandey, Sunil; Sahu, Chitrakant; Singh, Jawar
• Is Part Of: International journal of electronics letters. Volume 5:Issue 2(2017)
• Page Start: 129
• Page End: 136
• Publication Date: 2017-04-03
• Subjects: Band-to-band tunnelling -- gate-all-around -- gate-induced gate leakage -- gate-induced drain leakage -- junctionless field-effect transistor -- 1-dB compression point -- short-channel effects; Electronics -- Periodicals; Electronics; Periodicals; 621.38105
• DOI: 10.1080/21681724.2015.1092593
• Languages: English
• ISSNs: 2168-1732

Abstract

ABSTRACT: In this paper, we investigate the performance of a radio-frequency (RF) mixer based on single-silicon nanowire gate-all-around (GAA) junctionless field-effect transistor (JLFET). The main novelty in this work is the achievement of high linearity of RF mixer using band-to-band tunnelling phenomenon of GAA-JLFET. Using technology computer-aided design (TCAD) simulations, we extracted the value of unity-gain cut-off frequency of 420 GHz, which shows its potential for circuit applications in the extremely high-frequency regime. The harmonic-balanced simulations in Agilent advanced design system tool with an emphasis on the device-circuit interaction are used to analyse the RF mixer performance, such as output spectrum, 1-dB compression point, and conversion gain in comparison with 32-nm conventional n-metal oxide semiconductor transistor.