Growth behavior of Bi2Te3 and Sb2Te3 thin films on graphene substrate grown by plasma‐enhanced chemical vapor deposition. Issue 3 (25th January 2017)

• Record Type: Journal Article
• Authors: Lee, Chang Wan; Kim, Gun Hwan; Kang, Seong Gu; Kang, Min‐A; An, Ki‐Seok; Kim, Hyungjun; Lee, Young Kuk
• Is Part Of: Physica status solidi. Volume 11:Issue 3(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-01-25
• Subjects: two‐dimensional materials -- Bi2Te3 -- Sb2Te3 -- graphene -- plasma‐enhanced chemical vapor deposition; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201600369
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : A comparative study of the substrate effect on the growth mechanism of chalcogenide Bi2 Te3 and Sb2 Te3 thin films was carried out. Obvious microstructural discrepancy in both the as‐deposited Bi2 Te3 and Sb2 Te3 thin films was observed when grown on graphene or SiO2 /Si substrate. Bi2 Te3 and Sb2 Te3 thin films deposited on the graphene substrate were observed to be grown epitaxially along c ‐axis and show very smooth surface compared to that on SiO2 /Si substrate. Based on the experimental results of this study, the initial adsorption sites on graphene substrate during deposition process, which had been discussed theoretically, could be demonstrated empirically. Abstract : Epitaxial Bi2 Te3 (BT) and Sb2 Te3 (ST) thin films with very smooth surface deposited on the graphene substrate are demonstrated. Intensity ratios of I (006)/ I (015) of the BT and ST thin films grown on graphene substrate increased as the deposition temperature increased above 250 °C, which was not observed on SiO2 /Si substrate. Such high‐quality BT and ST thin films are expected to be applied to thermoelectric devices.