Direct Observation of Dual‐Filament Switching Behaviors in Ta2O5‐Based Memristors. Issue 15 (6th February 2017)

• Record Type: Journal Article
• Authors: Chang, Chia‐Fu; Chen, Jui‐Yuan; Huang, Chun‐Wei; Chiu, Chung‐Hua; Lin, Ting‐Yi; Yeh, Ping‐Hung; Wu, Wen‐Wei
• Is Part Of: Small. Volume 13:Issue 15(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-02-06
• Subjects: dual filaments -- hydroxide -- in situ TEM -- memristors -- RRAM -- Ta2O5; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201603116
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract : The Forming phenomenon is observed via in situ transmission electron microscopy in the Ag/Ta2 O5 /Pt system. The device is switched to a low‐resistance state as the dual filament is connected to the electrodes. The results of energy dispersive spectrometer and electron energy loss spectroscopy analyses demonstrate that the filament is composed by a stack of oxygen vacancies and Ag metal.