Cite
HARVARD Citation
Es-Sakhi, A. et al. (2017). Analysis of device capacitance and subthreshold behavior of Tri-gate SOI FinFET. Microelectronics journal. pp. 30-37. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Es-Sakhi, A. et al. (2017). Analysis of device capacitance and subthreshold behavior of Tri-gate SOI FinFET. Microelectronics journal. pp. 30-37. [Online].