In situ analysis of the crystallization process of Sb2S3 thin films by Raman scattering and X-ray diffraction. (5th May 2017)
- Record Type:
- Journal Article
- Title:
- In situ analysis of the crystallization process of Sb2S3 thin films by Raman scattering and X-ray diffraction. (5th May 2017)
- Main Title:
- In situ analysis of the crystallization process of Sb2S3 thin films by Raman scattering and X-ray diffraction
- Authors:
- Parize, Romain
Cossuet, Thomas
Chaix-Pluchery, Odette
Roussel, Hervé
Appert, Estelle
Consonni, Vincent - Abstract:
- Abstract: Sb2 S3 thin films grown by chemical bath deposition have received increasing interest for its integration into solar cells. However, its crystallization by post-deposition annealing represents a major difficulty owing to its instability at relatively low temperature. We combine in situ Raman scattering at very low laser power with in situ X-ray diffraction over a broad range of annealing temperatures and durations under N2 atmosphere to elucidate its crystallization process on anatase-TiO2 layers. The thermally activated crystallization is found to systematically involve the intermediate formation of a metallic Sb phase and very often of a senarmontite cubic Sb2 O3 phase, both of them vanishing prior to the formation of the stibnite Sb2 S3 phase. Compact and continuous 150 nm-thick Sb2 S3 thin films with no pyramid-shaped clusters on their top surface are crystallized in the range of 240 to 270 °C, namely below the commonly used annealing temperature of 300 °C. Their texture is tunable from (420) and (520) to (020) and (200) planes parallel to the surface by raising the annealing temperature owing to a process of abnormal grain growth. The Sb2 S3 thin films crystallized at the optimal annealing temperature of 270 °C are composed of dense crystallites with a typical size of several tens of nanometers, which is of high interest for their integration into solar cells. Graphical abstract: Highlights: A metallic Sb phase and very often a senarmontite Sb2 O3 phase areAbstract: Sb2 S3 thin films grown by chemical bath deposition have received increasing interest for its integration into solar cells. However, its crystallization by post-deposition annealing represents a major difficulty owing to its instability at relatively low temperature. We combine in situ Raman scattering at very low laser power with in situ X-ray diffraction over a broad range of annealing temperatures and durations under N2 atmosphere to elucidate its crystallization process on anatase-TiO2 layers. The thermally activated crystallization is found to systematically involve the intermediate formation of a metallic Sb phase and very often of a senarmontite cubic Sb2 O3 phase, both of them vanishing prior to the formation of the stibnite Sb2 S3 phase. Compact and continuous 150 nm-thick Sb2 S3 thin films with no pyramid-shaped clusters on their top surface are crystallized in the range of 240 to 270 °C, namely below the commonly used annealing temperature of 300 °C. Their texture is tunable from (420) and (520) to (020) and (200) planes parallel to the surface by raising the annealing temperature owing to a process of abnormal grain growth. The Sb2 S3 thin films crystallized at the optimal annealing temperature of 270 °C are composed of dense crystallites with a typical size of several tens of nanometers, which is of high interest for their integration into solar cells. Graphical abstract: Highlights: A metallic Sb phase and very often a senarmontite Sb2 O3 phase are formed during the crystallization of the Sb2 S3 phase. Compact and pure Sb2 S3 thin films with large-sized crystallites are formed at the optimal annealing temperature of 270 °C. The texture is tunable by raising the annealing temperature from 240 to 270 °C owing to a process of abnormal grain growth. … (more)
- Is Part Of:
- Materials & design. Volume 121(2017)
- Journal:
- Materials & design
- Issue:
- Volume 121(2017)
- Issue Display:
- Volume 121, Issue 2017 (2017)
- Year:
- 2017
- Volume:
- 121
- Issue:
- 2017
- Issue Sort Value:
- 2017-0121-2017-0000
- Page Start:
- 1
- Page End:
- 10
- Publication Date:
- 2017-05-05
- Subjects:
- Antimony trisulfide -- Crystallization -- X-ray diffraction -- Raman scattering -- Thin film
Materials -- Periodicals
Engineering design -- Periodicals
Matériaux -- Périodiques
Conception technique -- Périodiques
Electronic journals
620.11 - Journal URLs:
- http://catalog.hathitrust.org/api/volumes/oclc/9062775.html ↗
http://www.sciencedirect.com/science/journal/02641275 ↗
http://www.sciencedirect.com/science/journal/02613069 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.matdes.2017.02.034 ↗
- Languages:
- English
- ISSNs:
- 0264-1275
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5393.974000
British Library DSC - BLDSS-3PM
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