Self-powered, visible-blind ultraviolet photodetector based on n-ZnO nanorods/i-MgO/p-GaN structure light-emitting diodes. Issue 5 (19th December 2014)

• Record Type: Journal Article
• Authors: Zhou, Hai; Gui, Pengbin; Yu, Qiuheng; Mei, Jun; Wang, Hao; Fang, Guojia
• Is Part Of: Journal of materials chemistry. Volume 3:Issue 5(2015)
• Page Start: 990
• Page End: 994
• Publication Date: 2014-12-19
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c4tc02390k
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : A self-powered, visible-blind ultraviolet photodetector based on n-ZnO nanorods/i-MgO/p-GaN structure light-emitting diode. Abstract : A self-powered, visible-blind ultraviolet (UV) photodetector based on an n-ZnO nanorod (NRs)/i-MgO/p-GaN structure, light-emitting diode assembled by p-GaN and solution-processed i-MgO/n-ZnO nanorods is reported. We found that the device with a MgO insertion layer under 365 nm UV illumination with the light density of 11.2 μw cm −2 showed good UV photovoltaic properties with the open-circuit voltage and short-circuit current of 1.02 V and 510 nA, respectively. It showed good visible-blind UV photo-response characteristic with the ratio of photocurrent to dark current to as high as 8000 at 365 nm and the UV-visible responsivity ratio ( R 350 nm / R 500 nm ) reached 34.5. Moreover, the responsivity of the device with MgO insertion layer was 5 times greater than that of a n-ZnO NRs/p-GaN heterojunction at 254 nm. Furthermore, the n-ZnO NRs/i-MgO/p-GaN heterojunction can display electroluminescence characteristic at a forward bias, which was analyzed by the peak-deconvolution with Gaussian functions.