Lowering contact resistance by SWCNT–Al bilayer electrodes in solution processable metal-oxide thin film transistor. Issue 6 (24th December 2014)

• Record Type: Journal Article
• Authors: Lee, Su Jeong; Lee, Tae Il; Park, Jee Ho; Oh, Il-Kwon; Kim, Hyungjun; Kim, Jung Han; Kim, Chul-Hong; Chae, Gee Sung; Baik, Hong Koo; Myoung, Jae-Min
• Is Part Of: Journal of materials chemistry. Volume 3:Issue 6(2015)
• Page Start: 1403
• Page End: 1407
• Publication Date: 2014-12-24
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c4tc02431a
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : The electrical properties of the SWCNT and SWCNT–Al bilayer electrode TFTs on ITO coated glass substrate with HfO2 gate dielectric and In2 O3 channel layer. The inset shows an optical image of the SWCNT–Al bilayer electrode TFT. Abstract : A single-wall carbon nanotube–aluminium (SWCNT)–Al bilayer was developed as an electrode for a high-performance solution processable thin film transistor (TFT). The contact resistance was systematically lowered by inserting an Al layer between the SWCNTs and the indium oxide. The performance of the device was considerably enhanced by adopting the SWCNT–Al bilayer electrodes, because of the enlargement of the contact area of the electrodes and the formation of an Ohmic contact between the electrodes and the semiconductor. The TFT using the SWCNT–Al bilayer electrodes shows a threshold voltage of 0.45 V, a mobility of 4.50 cm 2 V −1 s and an I on / I off of 6.86 × 10 5 .