Cite
HARVARD Citation
Minjauw, M. et al. (2015). Atomic layer deposition of ruthenium at 100 °C using the RuO4-precursor and H2. Journal of materials chemistry. 3 (1), pp. 132-137. [Online].
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Minjauw, M. et al. (2015). Atomic layer deposition of ruthenium at 100 °C using the RuO4-precursor and H2. Journal of materials chemistry. 3 (1), pp. 132-137. [Online].