Electron tomography on III-Sb heterostructures on vicinal Si(001) substrates: Anti-phase boundaries as a sink for threading dislocations. (15th April 2017)

• Record Type: Journal Article
• Authors: Niehle, Michael; Trampert, Achim; Rodriguez, Jean-Baptiste; Cerutti, Laurent; Tournié, Eric
• Is Part Of: Scripta materialia. Number 132(2017)
• Page Start: 5
• Page End: 8
• Publication Date: 2017-04-15
• Subjects: Dislocation structure -- Antiphase domains -- 3D reconstruction -- Scanning/transmission electron microscopy -- Semiconductor heterostructures; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2017.01.018
• Languages: English
• ISSNs: 1359-6462

Abstract

Abstract: The three-dimensional arrangement of threading dislocations in a III-Sb based mid-infrared laser structure is studied by electron tomography (in a scanning transmission electron microscope). The stack of planar antimonide films which are grown by molecular beam epitaxy on vicinal Si(001) substrates, exhibits an inhomogeneous distribution of threading dislocations. A strong interaction of these line defects with planar defects is revealed. A significant number of dislocations appears to be trapped in anti-phase boundaries which are predominantly parallel to (110) lattice planes. Based on this finding, an explanation for the inhomogeneous distribution of dislocations is established. Graphical Abstract: