Cite
HARVARD Citation
Whiting, P. et al. (2017). Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts. Microelectronics and reliability. pp. 41-48. [Online].
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Whiting, P. et al. (2017). Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts. Microelectronics and reliability. pp. 41-48. [Online].