Structure and electrical properties of pure and yttrium-doped HfO2 films by chemical solution deposition through layer by layer crystallization process. (15th April 2017)

• Record Type: Journal Article
• Authors: Liang, Hailong; Xu, Jin; Zhou, Dayu; Wang, Xuexia; Liu, Xiaohua; Chu, Shichao; Liu, Xiaoying
• Is Part Of: Materials & design. Volume 120(2017)
• Page Start: 376
• Page End: 381
• Publication Date: 2017-04-15
• Subjects: Pure and yttrium-doped HfO2 -- Layer by layer crystallization process -- Thin films -- Electrical properties; Materials -- Periodicals; Engineering design -- Periodicals; Matériaux -- Périodiques; Conception technique -- Périodiques; Electronic journals; 620.11
• DOI: 10.1016/j.matdes.2017.02.019
• Languages: English
• ISSNs: 0264-1275

Abstract

Abstract: Pure and yttrium doped HfO2 thin films were fabricated on Si (100) substrates by chemical solution deposition through a layer by layer crystallization process. We systematically investigated the effects of thickness and Y doped concentration on structure and electrical properties of the HfO2 films. Results revealed that 4 nm thick undoped HfO2 was crystallized into a t/c-phase due to the surface energy effect, and this higher symmetry phase could be retained up to a film thickness of 16 nm through the layer by layer crystallization process. This layer by layer crystallization process also required less Y doping to stabilize t/c-HfO2 in thick films. The films showed a high dielectric constant about 42, low leakage current density of about 10 − 7 A/cm 2 (at 1 MV/cm) and a breakdown field up to 5 MV/cm. Considering the cost-effective deposition technique and good electrical properties, these films would be suitable for insulator applications in microelectronic devices. Graphical abstract: Highlights: A layer by layer crystallization process for pure and yttrium doped HfO2 films was studied. The films showed a high dielectric constant, low leakage current density and a high breakdown field. The less yttrium doping to stabilize higher symmetry phase was attributed to surface energy effect.