Thienoacene dimers based on the thieno[3, 2-b]thiophene moiety: synthesis, characterization and electronic properties. Issue 3 (1st December 2014)

• Record Type: Journal Article
• Authors: Niebel, Claude; Kim, Yeongin; Ruzié, Christian; Karpinska, Jolanta; Chattopadhyay, Basab; Schweicher, Guillaume; Richard, Audrey; Lemaur, Vincent; Olivier, Yoann; Cornil, Jérôme; Kennedy, Alan R.; Diao, Ying; Lee, Wen-Ya; Mannsfeld, Stefan; Bao, Zhenan; Geerts, Yves H.
• Is Part Of: Journal of materials chemistry. Volume 3:Issue 3(2015)
• Page Start: 674
• Page End: 685
• Publication Date: 2014-12-01
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c4tc02158d
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : Two thienoacene dimers based on the thieno[3, 2- b ]thiophene moiety were efficiently synthesized for use in OFETs. Abstract : Two thienoacene dimers based on the thieno[3, 2- b ]thiophene moiety were efficiently synthesized, characterized and evaluated as active hole-transporting layers in organic thin-film field-effect transistors. Both compounds behaved as active p-channel organic semi-conductors showing averaged hole mobility of up to 1.33 cm 2 V −1 s −1 .