Nucleation and growth kinetics of electrodeposited Ni films on Si(100) surfaces. (10th March 2017)

• Record Type: Journal Article
• Authors: Philipsen, Harold; Jehoul, Hannes; Inoue, Fumihiro; Vandersmissen, Kevin; Yang, Liu; Struyf, Herbert; van Dorp, Dennis
• Is Part Of: Electrochimica acta. Volume 230(2017)
• Page Start: 407
• Page End: 417
• Publication Date: 2017-03-10
• Subjects: Nickel -- Silicon -- Light induced plating (LIP) -- Growth kinetics -- Electrodeposition; Electrochemistry -- Periodicals; Electrochemistry, Industrial -- Periodicals; 541.37
• DOI: 10.1016/j.electacta.2017.02.010
• Languages: English
• ISSNs: 0013-4686

Abstract

Abstract: Nucleation and growth of nickel on n- and p-type Si(100) is investigated, using a plating bath composed of nickel sulphamate and boric acid. For n-type Si, the impact of applied potential and current density on nuclei density and deposit defectivity due to hydrogen gas bubble adsorption are studied. Cathodic current transients for p-type Si show a monotonous decay as a function of time, due to light 'shadowing' of the growing nuclei. A simple model is used to explain the observations. Additionally, the impact of the Si surface chemistry on the Ni deposition process is studied. On hydrogen-terminated Si, the nuclei have a hemispherical shape, while on anodically oxidized surfaces spherical nuclei are obtained.