Interplay between Ag and interstitial Mg on the p-type characteristics of Ag-doped Mg2Si: challenges for high hole conductivity. Issue 3 (25th November 2014)
- Record Type:
- Journal Article
- Title:
- Interplay between Ag and interstitial Mg on the p-type characteristics of Ag-doped Mg2Si: challenges for high hole conductivity. Issue 3 (25th November 2014)
- Main Title:
- Interplay between Ag and interstitial Mg on the p-type characteristics of Ag-doped Mg2Si: challenges for high hole conductivity
- Authors:
- Han, Xiaoping
Shao, Guosheng - Abstract:
- Abstract : The formation of linear cluster Ag–Mgint –Ag in the 〈111〉 direction explains the difficulty in achieving high hole conductivity in Ag-doped Mg2 Si. Abstract : Although Mg2 Si has been considered to be a highly promising material for low-cost thermoelectric harvest of waste heat at intermediate temperatures, the great difficulty in doping Mg2 Si into an effective p-type semiconductor poses a major technical barrier against utilizing the material to realize efficient devices. Here we attempt for the first time to elaborate its significantly different responses to n- and p-type doping, through theoretical investigation of the best p-type doped system, the Ag-doped Mg2 Si. Using the Heyd–Scuseria–Ernzerhof (HSE) hybrid functional, we find that fundamentally the p-type characteristics of Ag-doped Mg2 Si tend to be achieved through linear clustering between Ag and interstitial Mg ( i.e. Ag–Mgint –Ag) in the 〈111〉 direction in the Mg2 Si lattice, via strong interactions between donor (interstitial Mg, Mgint ) and acceptor (substitutional Ag) states. Such a donor–acceptor interaction leads to lowered hole concentration, on top of the outcome that the Ag-induced hole mobility is only 10% of the electron mobility in the best n-type material, the Sn-doped Mg2 Si. The current work suggests that it is rather challenging to achieve high hole conductivity in Ag-doped Mg2 Si, unless native defects particularly the interstitial Mg atoms can be avoided during the synthesis stage orAbstract : The formation of linear cluster Ag–Mgint –Ag in the 〈111〉 direction explains the difficulty in achieving high hole conductivity in Ag-doped Mg2 Si. Abstract : Although Mg2 Si has been considered to be a highly promising material for low-cost thermoelectric harvest of waste heat at intermediate temperatures, the great difficulty in doping Mg2 Si into an effective p-type semiconductor poses a major technical barrier against utilizing the material to realize efficient devices. Here we attempt for the first time to elaborate its significantly different responses to n- and p-type doping, through theoretical investigation of the best p-type doped system, the Ag-doped Mg2 Si. Using the Heyd–Scuseria–Ernzerhof (HSE) hybrid functional, we find that fundamentally the p-type characteristics of Ag-doped Mg2 Si tend to be achieved through linear clustering between Ag and interstitial Mg ( i.e. Ag–Mgint –Ag) in the 〈111〉 direction in the Mg2 Si lattice, via strong interactions between donor (interstitial Mg, Mgint ) and acceptor (substitutional Ag) states. Such a donor–acceptor interaction leads to lowered hole concentration, on top of the outcome that the Ag-induced hole mobility is only 10% of the electron mobility in the best n-type material, the Sn-doped Mg2 Si. The current work suggests that it is rather challenging to achieve high hole conductivity in Ag-doped Mg2 Si, unless native defects particularly the interstitial Mg atoms can be avoided during the synthesis stage or eliminated through subsequent equilibration treatment. … (more)
- Is Part Of:
- Journal of materials chemistry. Volume 3:Issue 3(2015)
- Journal:
- Journal of materials chemistry
- Issue:
- Volume 3:Issue 3(2015)
- Issue Display:
- Volume 3, Issue 3 (2015)
- Year:
- 2015
- Volume:
- 3
- Issue:
- 3
- Issue Sort Value:
- 2015-0003-0003-0000
- Page Start:
- 530
- Page End:
- 537
- Publication Date:
- 2014-11-25
- Subjects:
- Materials -- Periodicals
Chemistry, Analytic -- Periodicals
Optical materials -- Research -- Periodicals
Electronics -- Materials -- Research -- Periodicals
543.0284 - Journal URLs:
- http://pubs.rsc.org/en/journals/journalissues/tc# ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/c4tc02120g ↗
- Languages:
- English
- ISSNs:
- 2050-7526
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5012.205300
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 435.xml