Chemical interaction and ligand exchange between a [(CH3)3Si]3Sb precursor and atomic layer deposited Sb2Te3 films. Issue 6 (19th December 2014)

• Record Type: Journal Article
• Authors: Eom, Taeyong; Gwon, Taehong; Yoo, Sijung; Choi, Byung Joon; Kim, Moo-Sung; Ivanov, Sergei; Adamczyk, Andrew; Buchanan, Iain; Xiao, Manchao; Hwang, Cheol Seong
• Is Part Of: Journal of materials chemistry. Volume 3:Issue 6(2015)
• Page Start: 1365
• Page End: 1370
• Publication Date: 2014-12-19
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c4tc02688h
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : The exchange reaction between the TMS group in [(CH3 )3 Si]3 Sb and Sb2 Te3 film formed [(CH3 )3 Si]2 Te, replacing Te in the film with Sb. Abstract : The chemical interaction between the [(CH3 )3 Si]3 Sb precursor and atomic layer deposited Sb2 Te3 thin films was examined at temperatures ranging from 70 to 220 °C. The trimethylsilyl group [(CH3 )3 Si] displays greater affinity for Te than for Sb, and this drives replacement of Te in the film with Sb from the [(CH3 )3 Si]3 Sb precursor, while eliminating volatile [(CH3 )3 Si]2 Te, especially at elevated temperatures. The compositions of the resulting Sb–Te layers lie on the Sb2 Te3 –Sb tie line. The incorporation behavior of [(CH3 )3 Si]3 Sb was explained in terms of a Lewis acid–base reaction. The exchange reactions occurred to relieve the unfavorable hard–soft Lewis acid–base pair between the trimethylsilyl group and Sb in [(CH3 )3 Si]3 Sb. Such a reaction could be usefully adopted to control the chemical composition of ternary Ge–Sb–Te thin films.