Cite
HARVARD Citation
Gommé, G. et al. (2017). A detailed study of AlN and GaN grown on silicon‐on‐porous silicon substrate. Physica status solidi. 214 (4), p. n/a. [Online].
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Gommé, G. et al. (2017). A detailed study of AlN and GaN grown on silicon‐on‐porous silicon substrate. Physica status solidi. 214 (4), p. n/a. [Online].