Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation. Issue 19 (15th February 2017)

• Record Type: Journal Article
• Authors: Ye, Cong; Wu, Jia-Ji; Pan, Chih-Hung; Tsai, Tsung-Ming; Chang, Kuan-Chang; Wu, Huaqiang; Deng, Ning; Qian, He
• Is Part Of: RSC advances. Volume 7:Issue 19(2017)
• Page Start: 11585
• Page End: 11590
• Publication Date: 2017-02-15
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c7ra01104k
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : A low temperature supercritical fluid nitridation (SCF-nitridation) technique was investigated to dope nitrogen into a indium-tin-oxide (ITO) electrode to boost the performance of hafnium oxide resistive random access memory (RRAM). Abstract : A low temperature supercritical fluid nitridation (SCF-nitridation) technique was investigated to dope nitrogen into a indium-tin-oxide (ITO) electrode to boost the performance of hafnium oxide resistive random access memory (RRAM). After the SCF-nitridation treatment, the memory window for the N:ITO electrode device was increased from 40 to 100. Moreover, the operation voltages ( V SET and V RESET ) and currents ( I ON and I OFF ) were remarkably decreased, in which the I OFF was decreased to 65 nA. The possible reason for the performance improvement of resistive switching memory with the ITO transparent electrode induced by SCF-nitridation treatment was carefully explored.