Flexible and low-voltage organic phototransistors. Issue 19 (15th February 2017)

• Record Type: Journal Article
• Authors: Yu, Fanfan; Wu, Shaohua; Wang, Xiaohong; Zhang, Guobing; Lu, Hongbo; Qiu, Longzhen
• Is Part Of: RSC advances. Volume 7:Issue 19(2017)
• Page Start: 11572
• Page End: 11577
• Publication Date: 2017-02-15
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c6ra28821a
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : A stripping procedure was demonstrated to prepare ultra-smooth gate dielectric for flexible and low-voltage organic phototransistors. Abstract : A stripping procedure was demonstrated for the preparation of an ultra-smooth aluminum electrode. After potentiostatic anodization and treatment with a self-assembled monolayer (SAM) of n -octadecyl phosphonic acid, AlO x –SAM hybrid dielectrics were grown onto flexible, stripped aluminum combining low cost manufacture under ambient conditions with excellent dielectric characteristics (negligible leakage, 114.3 nF cm −2 capacitance). Field effect transistors using dinaphtho[2, 3- b :2′, 3′- f ]thieno[3, 2- b ]thiophene (DNTT) as an organic semiconductor can be operated below −5 V with a high mobility of 0.53 cm 2 V −1 s −1, high on/off current ratio of 1.7 × 10 5, low subthreshold slope of 210 mV dec −1, and good threshold of −1.51 V. Moreover, the DNTT transistor showed a good photoresponse to blue light with a wavelength of 450 nm, with photoresponsivity ( R ) of 50 A W −1 and a photocurrent/dark current ratio ( P ) of 5 at a light intensity of 5 μW cm −2 .