An Enhanced UV–Vis–NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure. Issue 3 (30th December 2016) - Zheng, Zhi
Abstract : ZnO nanostructure‐based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV–vis–NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV–vis–NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy. Abstract : UV–vis–NIR photodetector based on electrospun ZnO nanowire array and PbS quantum dots (QDs) thin film heterostructure is fabricated. This heterostructure photodetector exhibits an enhanced response speed and maintains its photoresponse performance via 200 cycles bending. This electrospinning and ligand exchange strategies open up possibilities for UV‐Vis‐NIR and flexible photodetector in optoelectronic circuitry.