Anatomy of Ag/Hafnia‐Based Selectors with 1010 Nonlinearity. Issue 11 (30th January 2017)

• Record Type: Journal Article
• Authors: Midya, Rivu; Wang, Zhongrui; Zhang, Jiaming; Savel'ev, Sergey E.; Li, Can; Rao, Mingyi; Jang, Moon Hyung; Joshi, Saumil; Jiang, Hao; Lin, Peng; Norris, Kate; Ge, Ning; Wu, Qing; Barnell, Mark; Li, Zhiyong; Xin, Huolin L.; Williams, R. Stanley; Xia, Qiangfei; Yang, J. Joshua
• Is Part Of: Advanced materials. Volume 29:Issue 11(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-01-30
• Subjects: memory -- memristor nonlinearity -- neuromorphic computing -- selector; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201604457
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : A novel Ag/oxide‐based threshold switching device with attractive features including ≈10 10 nonlinearity is developed. High‐resolution transmission electron microscopic analysis of the nanoscale crosspoint device suggests that elongation of an Ag nanoparticle under voltage bias followed by spontaneous reformation of a more spherical shape after power off is responsible for the observed threshold switching.