Room‐Temperature Quantum Transport Signatures in Graphene/LaAlO3/SrTiO3 Heterostructures. Issue 9 (2nd January 2017)

• Record Type: Journal Article
• Authors: Jnawali, Giriraj; Huang, Mengchen; Hsu, Jen‐Feng; Lee, Hyungwoo; Lee, Jung‐Woo; Irvin, Patrick; Eom, Chang‐Beom; D'Urso, Brian; Levy, Jeremy
• Is Part Of: Advanced materials. Volume 29:Issue 9(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-01-02
• Subjects: complex‐oxides -- graphene -- pseudospin -- quantum interference -- weak antilocalization; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201603488
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : High mobility graphene field‐effect devices, fabricated on the complex‐oxide heterostructure LaAlO3 /SrTiO3, exhibit quantum interference signatures up to room temperature. The oxide material is believed to play a critical role in suppressing short‐range and phonon contributions to scattering. The ability to maintain pseudospin coherence at room temperature holds promise for the realization of new classical and quantum information technologies.